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1. product pro?le 1.1 general description pnp low v cesat breakthrough in small signal (biss) transistor in a sot89 (sc-62/to-243) small and ?at lead surface-mounted device (smd) plastic package. npn complement: pbss303nx. 1.2 features n low collector-emitter saturation voltage v cesat n high collector current capability i c and i cm n high collector current gain (h fe ) at high i c n high ef?ciency due to less heat generation n smaller required printed-circuit board (pcb) area than for conventional transistors 1.3 applications n dc-to-dc conversion n mosfet gate driving n motor control n charging circuits n power switches (e.g. motors, fans) 1.4 quick reference data [1] pulse test: t p 300 m s; d 0.02. pbss303px 30 v, 5.1 a pnp low v cesat (biss) transistor rev. 01 22 august 2006 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit v ceo collector-emitter voltage open base - - - 30 v i c collector current - - - 5.1 a i cm peak collector current single pulse; t p 1ms -- - 10.2 a r cesat collector-emitter saturation resistance i c = - 4a; i b = - 200 ma [1] -3248m w
pbss303px_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 22 august 2006 2 of 15 philips semiconductors pbss303px 30 v, 5.1 a pnp low v cesat (biss) transistor 2. pinning information 3. ordering information 4. marking [1] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china table 2. pinning pin description simpli?ed outline symbol 1 emitter 2 collector 3 base 321 sym079 1 2 3 table 3. ordering information type number package name description version pbss303px sc-62 plastic surface-mounted package; collector pad for good heat transfer; 3 leads sot89 table 4. marking codes type number marking code [1] pbss303px *5k
pbss303px_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 22 august 2006 3 of 15 philips semiconductors pbss303px 30 v, 5.1 a pnp low v cesat (biss) transistor 5. limiting values [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 6 cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - - 30 v v ceo collector-emitter voltage open base - - 30 v v ebo emitter-base voltage open collector - - 5v i c collector current - - 5.1 a i cm peak collector current single pulse; t p 1ms - - 10.2 a p tot total power dissipation t amb 25 c [1] - 0.6 w [2] - 1.65 w [3] - 2.1 w t j junction temperature - 150 c t amb ambient temperature - 65 +150 c t stg storage temperature - 65 +150 c (1) ceramic pcb, al 2 o 3 , standard footprint (2) fr4 pcb, mounting pad for collector 6 cm 2 (3) fr4 pcb, standard footprint fig 1. power derating curves 006aaa556 t amb ( c) - 75 175 125 25 75 - 25 1.0 0.5 1.5 2.0 2.5 p tot (w) 0 (3) (2) (1)
pbss303px_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 22 august 2006 4 of 15 philips semiconductors pbss303px 30 v, 5.1 a pnp low v cesat (biss) transistor 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 6 cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] - - 208 k/w [2] --76k/w [3] --60k/w r th(j-sp) thermal resistance from junction to solder point --20k/w fr4 pcb, standard footprint fig 2. transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa557 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 0.20 0.10 10 2 10 10 3 z th(j-a) (k/w) 1 0 0.05 0.02 0.01 d = 1 0.75 0.50 0.33
pbss303px_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 22 august 2006 5 of 15 philips semiconductors pbss303px 30 v, 5.1 a pnp low v cesat (biss) transistor fr4 pcb, mounting pad for collector 6 cm 2 fig 3. transient thermal impedance from junction to ambient as a function of pulse duration; typical values ceramic pcb, al 2 o 3 , standard footprint fig 4. transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa558 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 0.01 0.05 0.10 0.20 0.33 d = 1 0.02 10 1 10 2 z th(j-a) (k/w) 10 - 1 0 0.75 0.50 006aaa559 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 0.33 0.10 0 0.01 0.02 10 1 10 2 z th(j-a) (k/w) 10 - 1 0.05 d = 1 0.75 0.50 0.20
pbss303px_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 22 august 2006 6 of 15 philips semiconductors pbss303px 30 v, 5.1 a pnp low v cesat (biss) transistor 7. characteristics [1] pulse test: t p 300 m s; d 0.02. table 7. characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit i cbo collector-base cut-off current v cb = - 30 v; i e =0a - - - 100 na v cb = - 30 v; i e =0a; t j = 150 c -- - 50 m a i ebo emitter-base cut-off current v eb = - 5 v; i c =0a - - - 100 na h fe dc current gain v ce = - 2 v; i c = - 0.5 a [1] 250 400 - v ce = - 2 v; i c = - 1a [1] 250 370 - v ce = - 2 v; i c = - 2a [1] 200 310 - v ce = - 2 v; i c = - 4a [1] 150 220 - v ce = - 2 v; i c = - 6a [1] 100 160 - v cesat collector-emitter saturation voltage i c = - 0.5 a; i b = - 50 ma [1] - - 25 - 35 mv i c = - 1 a; i b = - 50 ma [1] - - 50 - 70 mv i c = - 1 a; i b = - 10 ma [1] - - 75 - 105 mv i c = - 2 a; i b = - 40 ma [1] - - 90 - 130 mv i c = - 4 a; i b = - 200 ma [1] - - 130 - 190 mv i c = - 4 a; i b = - 400 ma [1] - - 120 - 175 mv i c = - 4 a; i b = - 40 ma [1] - - 230 - 350 mv i c = - 5.1 a; i b = - 255 ma [1] - - 160 - 230 mv r cesat collector-emitter saturation resistance i c = - 4 a; i b = - 200 ma [1] - 3248m w i c = - 4 a; i b = - 40 ma [1] - 5888m w v besat base-emitter saturation voltage i c = - 1 a; i b = - 100 ma [1] - - 0.82 - 0.9 v i c = - 4 a; i b = - 400 ma [1] - - 0.93 - 1.05 v v beon base-emitter turn-on voltage v ce = - 2 v; i c = - 2a [1] - - 0.76 - 0.85 v t d delay time v cc = - 12.5 v; i c = - 3a; i bon = - 0.15 a; i boff = 0.15 a -15-ns t r rise time - 55 - ns t on turn-on time - 70 - ns t s storage time - 215 - ns t f fall time - 105 - ns t off turn-off time - 320 - ns f t transition frequency v ce = - 10 v; i c = - 0.1 a; f = 100 mhz - 130 - mhz c c collector capacitance v cb = - 10 v; i e =i e =0a; f=1mhz - 110 160 pf
pbss303px_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 22 august 2006 7 of 15 philips semiconductors pbss303px 30 v, 5.1 a pnp low v cesat (biss) transistor v ce = - 2v (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c fig 5. dc current gain as a function of collector current; typical values fig 6. collector current as a function of collector-emitter voltage; typical values v ce = - 2v (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c i c /i b =20 (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c fig 7. base-emitter voltage as a function of collector current; typical values fig 8. base-emitter saturation voltage as a function of collector current; typical values 006aaa596 400 600 200 800 1000 h fe 0 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (3) (2) (1) 006aaa604 v ce (v) 0 - 5 - 4 - 2 - 3 - 1 - 6 - 8 - 4 - 2 - 10 - 12 - 14 i c (a) 0 - 30 - 135 - 120 - 105 - 90 - 75 - 60 - 45 - 15 ib (ma) = - 150 006aaa597 - 0.4 - 0.8 - 1.2 v be (v) 0 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (3) (2) (1) 006aaa600 - 0.4 - 0.8 - 1.2 v besat (v) 0 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (3) (2) (1)
pbss303px_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 22 august 2006 8 of 15 philips semiconductors pbss303px 30 v, 5.1 a pnp low v cesat (biss) transistor i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 9. collector-emitter saturation voltage as a function of collector current; typical values fig 10. collector-emitter saturation voltage as a function of collector current; typical values i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 11. collector-emitter saturation resistance as a function of collector current; typical values fig 12. collector-emitter saturation resistance as a function of collector current; typical values 006aaa598 - 10 - 1 - 10 - 2 - 1 v cesat (v) - 10 - 3 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (3) (2) (1) 006aaa599 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 - 10 - 2 - 10 - 1 - 1 - 10 v cesat (v) - 10 - 3 (3) (2) (1) 006aaa601 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 10 - 1 1 10 10 2 r cesat ( w ) 10 - 2 (3) (2) (1) 006aaa603 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 1 10 - 1 10 2 10 10 3 r cesat ( w ) 10 - 2 (3) (2) (1)
pbss303px_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 22 august 2006 9 of 15 philips semiconductors pbss303px 30 v, 5.1 a pnp low v cesat (biss) transistor 8. test information fig 13. biss transistor switching time de?nition v cc = - 12.5 v; i c = - 3 a; i bon = - 0.15 a; i boff = 0.15 a fig 14. test circuit for switching times 006aaa266 - i bon (100 %) - i b input pulse (idealized waveform) - i boff 90 % 10 % - i c (100 %) - i c t d t on 90 % 10 % t r output pulse (idealized waveform) t f t t s t off r c r2 r1 dut mgd624 v o r b (probe) 450 w (probe) 450 w oscilloscope oscilloscope v bb v i v cc
pbss303px_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 22 august 2006 10 of 15 philips semiconductors pbss303px 30 v, 5.1 a pnp low v cesat (biss) transistor 9. package outline 10. packing information [1] for further information and the availability of packing methods, see section 15 . fig 15. package outline sot89 (sc-62/to-243) 04-08-03 dimensions in mm 4.6 4.4 1.8 1.4 1.6 1.4 1.2 0.8 3 1.5 0.48 0.35 0.44 0.23 0.53 0.40 2.6 2.4 4.25 3.75 123 table 8. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 1000 4000 pbss303px sot89 8 mm pitch, 12 mm tape and reel -115 -135
pbss303px_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 22 august 2006 11 of 15 philips semiconductors pbss303px 30 v, 5.1 a pnp low v cesat (biss) transistor 11. soldering dimensions in mm fig 16. re?ow soldering footprint sot89 (sc-62) dimensions in mm not recommended for wave soldering fig 17. wave soldering footprint sot89 (sc-62) msa442 1.00 (3x) 4.85 4.60 1.20 4.75 0.60 (3x) 0.70 (3x) 3.70 3.95 1.20 0.50 1.70 1 32 0.20 0.85 1.20 1.20 1.90 2.00 2.25 solder lands solder resist occupied area solder paste msa423 3.00 7.60 6.60 1.20 5.30 1.50 0.50 3.50 2.40 1 3 2 0.70 solder lands solder resist occupied area transport direction during soldering
pbss303px_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 22 august 2006 12 of 15 philips semiconductors pbss303px 30 v, 5.1 a pnp low v cesat (biss) transistor 12. mounting pcb thickness: fr4 pcb = 1.6 mm ceramic pcb = 0.635 mm pcb thickness = 1.6 mm fig 18. fr4 pcb, standard footprint; ceramic pcb, al 2 o 3 , standard footprint sot89 (sc-62) fig 19. fr4 pcb, mounting pad for collector 6 cm 2 sot89 (sc-62) 001aaa234 2.5 mm 5 mm 1.6 mm 0.5 mm 1 mm 3.96 mm 3 mm 2.5 mm 1 mm 40 mm 32 mm 001aaa235 2.5 mm 5 mm 1.6 mm 0.5 mm 1 mm 3.96 mm 30 mm 20 mm 40 mm 32 mm
pbss303px_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 22 august 2006 13 of 15 philips semiconductors pbss303px 30 v, 5.1 a pnp low v cesat (biss) transistor 13. revision history table 9. revision history document id release date data sheet status change notice supersedes pbss303px_1 20060822 product data sheet - -
pbss303px_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 22 august 2006 14 of 15 philips semiconductors pbss303px 30 v, 5.1 a pnp low v cesat (biss) transistor 14. legal information 14.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .semiconductors .philips .com. 14.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. philips semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local philips semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 14.3 disclaimers general information in this document is believed to be accurate and reliable. however, philips semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes philips semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use philips semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a philips semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. philips semiconductors accepts no liability for inclusion and/or use of philips semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale philips semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .semiconductors .philips .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by philips semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 14.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 15. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
philips semiconductors pbss303px 30 v, 5.1 a pnp low v cesat (biss) transistor ? koninklijke philips electronics n.v. 2006. all rights reserved. for more information, please visit: http://www.semiconductors.philips.com. for sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. date of release: 22 august 2006 document identifier: pbss303px_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 16. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 packing information. . . . . . . . . . . . . . . . . . . . . 10 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 14 legal information. . . . . . . . . . . . . . . . . . . . . . . 14 14.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 14.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 15 contact information. . . . . . . . . . . . . . . . . . . . . 14 16 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

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